? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c; r gs = 1 m 800 v v gs continuous 30 v v gsm transient 40 v i d25 t c = 25 c44a i dm t c = 25 c, pulse width limited by t jm 100 a i ar t c = 25 c22a e ar t c = 25 c80mj e as t c = 25 c 3.4 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 p d t c = 25 c 1040 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 s 260 c m d mounting torque (ixfk) 1.13.10 nm/lb.in. f c mounting force (ixfx) 20..120 /4.5..25 n/lb weight (ixfk) 10 g (ixfx) 5 g g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 800 a 800 v v gs(th) v ds = v gs , i d = 8 ma 3.0 5.0 v i gss v gs = 30 v dc , v ds = 0 200 na i dss v ds = v dss 50 a v gs = 0 v t j = 125 c 1.5 ma r ds(on) v gs = 10 v, i d = 0.5 i d25 , note 1 190 m polarhv tm hiperfet power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode features z fast intrinsic diode z international standard packages z unclamped inductive switching (uis) rated z low package inductance - easy to drive and to protect advantages z easy to mount z space savings z high power density ixfk 44n80p ixfx 44n80p v dss = 800 v i d25 =44 a r ds(on) 190 m t rr 250 ns ds99478e(01/06) plus247 (ixfx) s g d to-264 (ixfk) (tab) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 44n80p ixfx 44n80p symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 i d25 , note 1 27 43 s c iss 12 nf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 910 pf c rss 30 pf t d(on) 28 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = i d25 22 ns t d(off) r g = 1 (external) 75 ns t f 27 ns q g(on) 198 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 67 nc q gd 65 nc r thjc 0.12 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 44 a i sm repetitive 100 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 22 a, -di/dt = 100 a/ s 250 ns q rm v r = 100 v, v gs = 0 v 0.8 c i rm 8.0 a note 1: pulse test, t 300 s, duty cycle d 2 % terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm (ixfx) outline to-264 (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190
? 2006 ixys all rights reserved fig. 2. extended output characteristics @ 25 c 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v d s - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ 125 c 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 12 14 16 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 1. output characteristics @ 25 c 0 5 10 15 20 25 30 35 40 45 012345678 v d s - volts i d - amperes v gs = 10v 7v 5v 6v fig. 4. r ds(on ) norm alized to 0.5 i d25 value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalize d i d = 44a i d = 22a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) norm alized to 0.5 i d25 value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 102030405060708090100 i d - amperes r d s ( o n ) - normalize d t j = 25 c v gs = 10v t j = 125 c ixfk 44n80p ixfx 44n80p
ixys reserves the right to change limits, test conditions, and dimensions. ixfk 44n80p ixfx 44n80p fig. 11. capacitance 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 175 200 q g - nanocoulombs v g s - volts v ds = 400v i d = 22a i g = 10ma fig. 7. input admittance 0 10 20 30 40 50 60 70 3.5 4 4.5 5 5.5 6 6.5 v g s - volts i d - amperes t j = 125 c 25 c - 40 c fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 10 2030 405060 7080 i d - amperes g f s - siemens t j = - 40 c 25 c 125 c fig. 9. source current vs. source-to-drain voltage 0 20 40 60 80 100 120 140 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v s d - volts i s - amperes t j = 125 c t j = 25 c fig. 13. maxim um transient therm al resistance 0.00 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - oc / w
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